NDP6020P
Manufacturer:
On Semiconductor
Mfr.Part #:
NDP6020P
Datasheet:
Description:
MOSFETs TO-220-3 Through Hole P-Channel number of channels:1 60 W -20 V Continuous Drain Current (ID):24 A 35 nC
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -20 V |
| Length | 10.67 mm |
| Width | 4.7 mm |
| Max Operating Temperature | 175 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 3 |
| Resistance | 50 mΩ |
| Height | 16.3 mm |
| Packaging | Tube |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Weight | 1.8 g |
| Number of Elements | 1 |
| Current Rating | -24 A |
| Lifecycle Status | EOL (Last Updated: 5 months ago) |
| Max Power Dissipation | 60 W |
| Power Dissipation | 60 W |
| Threshold Voltage | -700 mV |
| Number of Channels | 1 |
| Input capacitance | 1.59 nF |
| Continuous Drain Current (ID) | 24 A |
| Rds On Max | 50 mΩ |
| Drain to Source Voltage (Vdss) | 20 V |
| Turn-On Delay Time | 15 ns |
| Turn-Off Delay Time | 120 ns |
| Element Configuration | Single |
| Rise Time | 27 ns |
| Gate Charge | 35 nC |
| Drain to Source Resistance | 5 mΩ |
| Gate to Source Voltage (Vgs) | 8 V |
| Drain to Source Breakdown Voltage (Vds) | -20 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | LIFETIME (Last Updated: 5 months ago) |
| Gate to Source Threshold Voltage | 1 V |
| FET Type(Transistor Polarity) | P-Channel |
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